Micron Technology

Description

Features. VDD = 2.5V 0.2V, VDDQ = 2.5V 0.2V. VDD = 2.6V 0.1V, VDDQ = 2.6V 0.1V (DDR400)1. Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two one per byte). Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock Features. Organization: Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words). Block size: 64 pages (128K + 4K bytes). Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;. 8Gb: 8,192 blocks. Read performance: Random read: 25 s. Sequential read: 30ns (3V x8 only). Features. VDD = 2.5V 0.2V, VDDQ = 2.5V 0.2V. VDD = 2.6V 0.1V, VDDQ = 2.6V 0.1V (DDR400)1. Bidirectional data strobe (DQS) transmitted/ received with data, that is, source-synchronous data capture (x16 has two one per byte). Internal, pipelined double-data-rate (DDR) architecture; two data accesses per