Part Number | APT28M120B2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Micron Technology |
Description | MOSFET N-CH 1200V 29A T-MAX |
Series | POWER MOS 8 |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9670pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 1135W (Tc) |
Rds On (Max) @ Id, Vgs | 560 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | T-MAX,[B2] |
Package / Case | TO-247-3 Variant |
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APT28M120B2
MICROSOFT
8491
0.55
Heisener Electronics Limited
APT28M120B2
MIRCON
6978
1.645
Finestock Electronics HK Limited
APT28M120B2
MIRON
6502
2.74
ATLANTIC TECHNOLOGY LIMITED
APT28M120B2
MICROCHIP TECHNOLOGY INC
5035
3.835
Cicotex Electronics (HK) Limited
APT28M120B2
MICORON
2654
4.93
FLOWER GROUP(HK)CO.,LTD