Part Number | APT45GP120B2DQ2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Micron Technology |
Description | IGBT 1200V 113A 625W TMAX |
Series | POWER MOS 7 |
Packaging | Tube |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 113A |
Current - Collector Pulsed (Icm) | 170A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A |
Power - Max | 625W |
Switching Energy | 900µJ (on), 905µJ (off) |
Input Type | Standard |
Gate Charge | 185nC |
Td (on/off) @ 25°C | 18ns/100ns |
Test Condition | 600V, 45A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Image |
APT45GP120B2DQ2G
MICROSOFT
36764
0.25
Ysx Tech Co., Limited
APT45GP120B2DQ2G
MIRCON
6000
1.1075
Bonase Electronics (HK) Co., Limited
APT45GP120B2DQ2G
MIRON
20000
1.965
Yingxinyuan INT'L (Group) Limited
APT45GP120B2DQ2G
MICROCHIP TECHNOLOGY INC
18000
2.8225
HK Niuhuasi Technology Limited
APT45GP120B2DQ2G
MICORON
11001
3.68
CIS Ltd (CHECK IC SOLUTION LIMITED)