Part Number | APT50GP60J |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Micron Technology |
Description | IGBT 600V 100A 329W SOT227 |
Series | POWER MOS 7 |
IGBT Type | PT |
Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Power - Max | 329W |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
Current - Collector Cutoff (Max) | 500µA |
Input Capacitance (Cies) @ Vce | 5.7nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | ISOTOP |
Image |
APT50GP60J
MICROSOFT
2169
1.12
HY(HK) Ic Limited
APT50GF120JRDQ3
MIRCON
7381
1.8475
Wanzhong Mechanical & Electrical Equipment Limited
APT50GN60BDQ2G
MIRON
1581
2.575
Yu Hong Technologies Limited
APT50GF120JRD
MICROCHIP TECHNOLOGY INC
1231
3.3025
Yusheng Electronics (HK) Limited
APT50GF120JRDQ3
MICORON
450
4.03
BeiJing Jietuozijing Science and Technology Co., Ltd.