Part Number | APTM60H23FT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Micron Technology |
Description | MOSFET 4N-CH 600V 20A SP1 |
Series | - |
Packaging | Bulk |
FET Type | 4 N-Channel (H-Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 276 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5316pF @ 25V |
Power - Max | 208W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP1 |
Supplier Device Package | SP1 |
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APTM60H23FT1G
MICROSOFT
9757
1.27
Hong Kong In Fortune Electronics Co., Limited
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MIRCON
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Wide Key International Limited
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MY Group (Asia) Limited
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Inchange Semiconductor Company Limited