Part Number | BSZ440N10NS3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Micron Technology |
Description | MOSFET N-CH 100V 18A TSDSON-8 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 12µA |
Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 29W (Tc) |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 12A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSZ440N10NS3
MICROSOFT
9730
1.37
Useta Tech (HK) Limited
BSZ440N10NS3 G
MIRCON
3882
2.5425
ONSTAR ELECTRONICS CO., LIMITED
BSZ440N10NS3 G
MIRON
4032
3.715
CIS Ltd (CHECK IC SOLUTION LIMITED)
BSZ440N10NS3 G
MICROCHIP TECHNOLOGY INC
8113
4.8875
Shenzhen Qiangneng Electronics Co., Ltd.
BSZ440N10NS3
MICORON
6415
6.06
Nosin (HK) Electronics Co.