Micron Technology

Description

1360. 2000. 24 x 16. MT53B256M32D1DS-062 AUT:C. 136. 1360. 2000. 24 x 16. MT53B256M32D1NP -053 WT:C. 136. 1360. 2000. 24 x 16. MT53B256M32D1NP -062 AUT:C. 136. 1360. 1000. 24 x 16. MT53B256M32D1NP -062 WT:C. 136. 1360. 1000. 24 x 16. MT53B256M64D2NW-053 WT:C. 119. 1190. 1000. 24 x 20. Dec 14, 2016 MT53B256M32D1NP -062 WT:C. 8Gb. 8Gb. SDP x32. C. 1642. Micron. MT53B384M32D2NP-062 WT:B. 12Gb. 6Gb. DDP x32. B. 1642. Micron. MT53B512M32D2NP-062 WT:C. 16Gb. 8Gb. DDP x32. C. 1644. Samsung. K4F8E304HB-MGCJ. 8Gb. 8Gb. SDP x32. B. 1610. Samsung. K4F2E3S4HM- MGCJ. MT53B256M32D1NP -062 WT. Further questions should be addressed to your local Micron sales representative. Micron Technology, Inc. Quality and Reliability Assurance Department. Micron Technology, Inc. Quality & Reliability Assurance Dept. Mail Stop 502. 8000 S. Federal Way. P.O. Box 6. Boise, Idaho 83707-0006. 2011 6 8 MT53B256M32D1NP -062 WT. Table of Toxic and Hazardous Substances/ Elements and their Content as required by Chinas Management Methods for Controlling Pollution by Electronic Information Products. . . Part Name. This paper will: Provide an overview of DDR4 memory interfaces including topologies and constraints that need to be adhered to in order to meet timing requirements. Discuss new techniques designed to accelerate routing and tuning of high-speed signals quickly and efficiently. These techniques can be applied to