Part Number | MUN5113DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Micron Technology |
Description | TRANS 2PNP PREBIAS 0.25W SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MUN5113DW1T1G
MICROSOFT
562
1.48
HK HEQING ELECTRONICS LIMITED
MUN5113DW1T1G
MIRCON
10000
2.755
Hong Kong Capital Industrial Co.,Ltd
MUN5113DW1T1G
MIRON
8710
4.03
ONSTAR ELECTRONICS CO., LIMITED
MUN5113DW1T1G
MICROCHIP TECHNOLOGY INC
4590
5.305
CIS Ltd (CHECK IC SOLUTION LIMITED)
MUN5113DW1T1G
MICORON
690
6.58
Yingxinyuan INT'L (Group) Limited