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Description
Datasheet Feb 11, 2008 SPW20N60C3 . Cool MOS Power Transistor. VDS @ Tjmax. 650. V. RDS(on). 0.19. . ID. 20.7. A. Feature. New revolutionary high voltage Feb 2, 2006 R2 2W, 43k ohm TR2 SPW20N60C3 (ln neon) ZD2 0.8W, 16V. R3 2W, 68k ohm D1 100V, 1A or more ZD3 0.8W, 10V. R4 2W, 68k ohm C1 1. 2. 3. Material Content Data Sheet. Sales Product Name. SPW20N60C3 . Issued . 28. August 2013. MA#. MA001097634. Package. PG-TO247-3-41. Weight*. CoolMO. S New Generation 600V & 650 V C6/E6 replacements for C3. CoolMO. S 600V C6/E6 replacements for C3. R D. S(on). TO-252 DP. AK. TO- 263 D. R3. 1. 499 k. R1. 1. 499k. PGN. D. C1. 2. 0.1uF. J1. 5. 1. 2. CS. 2+. CS. 2-. K1. G. 6RL. -1. A-DC1. 2. 2. 3. 1. 4. TP. 15. VAC. Q1. SPW20N60C3 . 1. 2. 3. 1N. 41. 48.
| Part Number | SPW20N60C3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Micron Technology |
| Description | MOSFET N-CH 650V 20.7A TO-247 |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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