Part Number | VP2206N3-G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Micron Technology |
Description | MOSFET P-CH 60V 640MA TO92-3 |
Series | - |
Packaging | Bulk |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 640mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 740mW (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Image |
VP2206N3-G
MICROSOFT
2877
1.53
MY Group (Asia) Limited
VP2206N3-G
MIRCON
7114
3.0175
Dedicate Electronics (HK) Limited
VP2206N3-G
MIRON
6712
4.505
HK HEQING ELECTRONICS LIMITED
VP2206N3-G
MICROCHIP TECHNOLOGY INC
2546
5.9925
CIS Ltd (CHECK IC SOLUTION LIMITED)
VP2206N3-G
MICORON
5789
7.48
Yingxinyuan INT'L (Group) Limited